ITRI and Ganvix Extend JV to Commercialize Innovative Laser Technology - EE Times Asia
Thermal analysis of GaN-based laser diode mini-array<xref rid="cpb_27_9_094208_fn1" ref-type="fn">*</xref><fn id="cpb_27_9_094208_fn1"><label>*</label><p>Project supported by the National Key Research and Development Program of China (Grant Nos ...
Semiconductor Today features "Semi-polar indium gallium nitride laser diode/waveguide photodiode combo" | CEMSE | Computer, Electrical and Mathematical Sciences and Engineering
Laser slicing: A thin film lift-off method for GaN-on-GaN technology - ScienceDirect
Semipolar GaN-based laser diodes for Gbit/s white lighting communication: devices to systems
Gallium Nitride (GaN) Laser Diodes
KYOCERA Develops New GaN Laser Chip, World's Smallest* to be Mass-Produced from Silicon Working Substrate | News | Newsroom | KYOCERA
Indium gallium nitride laser diode directly integrated with silicon
![PDF] Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/b56c6c3f707aa5ecd68e9ff9aabdf10e32045f61/3-Figure1-1.png "PDF] Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System | Semantic Scholar")
PDF] Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System | Semantic Scholar
The structure of a standard InGaN / GaN laser diode with marked... | Download Scientific Diagram
Realization of 366 nm GaN/AlGaN single quantum well ultraviolet laser diodes with a reduction of carrier loss in the waveguide layers: Journal of Applied Physics: Vol 130, No 17
Schematic cross-section of gallium nitride (GaN)-based epitaxial wafer... | Download Scientific Diagram
Reducing power losses in indium gallium nitride laser diodes on silicon
Micromachines | Free Full-Text | InGaN/GaN Distributed Feedback Laser Diodes with Surface Gratings and Sidewall Gratings
Semipolar (202¯1) GaN laser diodes operating at 388 nm grown by plasma-assisted molecular beam epitaxy - Advances in Engineering
A 350-nm-band GaN/AlGaN multiple-quantum-well laser diode on bulk GaN: Applied Physics Letters: Vol 107, No 15
BluGlass — Brighter future, lower temperature - Edison Group
ganld - tangweipku
Room-Temperature Electrically Injected AlGaN-Based near-Ultraviolet Laser Grown on Si | ACS Photonics
Gallium-Nitride Diode Lasers | Ferdinand-Braun-Institut
Deep UV Laser at 249 nm Based on GaN Quantum Wells | ACS Photonics
Kyocera process for world's smallest GaN laser IC
Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide<xref rid="cpb_26_12_124210_fn1" ref-type="fn">*</xref><fn id="cpb_26_12_124210_fn1"> <label>*</label> <p>Project supported by the ...
